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irams10up60a pbf 2 www.irf.com internal electrical schematic - irams10up60a pbf 23 vs1 24 ho1 25 vb1 1 vcc 2 hin1 3 hin2 4 hin3 5 lin1 lin2 6 lin3 7 f 8 itrip 9 en 10 rcin 11 vss 12 com 13 22 vb2 21 ho2 20 vs2 19 vb3 18 ho3 17 vs3 vru (12) vrw (14) vrv (13) vb1 (7) u, vs1 (8) vb2 (4) v, vs2 (5) vb3 (1) w, vs3 (2) thermistor r 3 vdd (22) vss (23) r 1 r 2 c rg1 rg3 rg5 driver ic r t lo1 16 lo3 14 lo2 15 rg2 rg4 rg6 t/i trip (21) hin1 (15) hin2 (16) hin3 (17) lin1 (18) lin2 (19) lin3 (20) v (10) +
irams10up60 apbf www.irf.com 3 thermal resistance inverter section electrical characteristics @ t j = 25c inverter section switching characteristics symbol parameter min typ max units e on turn-on switching loss --- 200 235 e off turn-off switching loss --- 75 100 e tot total switching loss --- 275 335 t j =25c e on turn-on swtiching loss --- 300 360 t j =150c e off turn-off switching loss --- 135 165 e tot total switching loss --- 435 525 erec diode reverse recovery energy --- 30 40 j t rr diode reverse recovery time --- 100 145 ns rbsoa reverse bias safe operating area scsoa short circuit safe operating area 10 --- --- s full square t j =150c, i c =5a, v p =600v v + =480v, v dd =+15v to 0v see ct3 conditions i c =5a, v + =400v v dd =15v, l=1mh see ct1 energy losses include "tail" and diode reverse recovery t j =150c, v p =600v, v + =360v, v dd =+15v to 0v see ct2 j j t j =150c, v + =400v v dd =15v, i f =5a, l=1mh symbol parameter min typ max units conditions r th(j- c) junction to case thermal resistance, each igbt under inverter operation. --- 4.2 4.7 c/w r th(j- c) junction to case thermal resistance, each diode under inverter operation. --- 5.5 6.5 c/w r th(c- s) thermal resistance case to sink --- 0.1 --- c/w flat, g reased surface. heatsink compound thermal conductivity - 1w/mk symbol parameter min typ max units conditions v (br)ces collector-to-emitter breakdown voltage 600 --- --- v v in =0v, i c =20 a ? v (br)ces / ? t temperature coeff. of breakdown voltage --- 0.57 --- v/c v in =0v, i c =1.0 m a (25c - 150c) --- 1.7 2.0 i c =5a t j =25c, v dd =15v --- 2.0 2.4 i c =5a t j =150c --- 5 15 v in =5v, v + =600v --- 10 40 v in =5v, v + =600v, t j =150c i lk_module zero gate phase-to-phase current -- -- 50 av in =5v, v + =600v --- 1.8 2.35 i c =5a --- 1.3 1.7 i c =5a, t j =150c v a v v ce(on) i ces v fm collector-to-emitter saturation voltage zero gate voltage collector current-to-emitter diode forward voltage drop
irams10up60a pbf 4 www.irf.com recommended operating conditions driver function the input/output logic timing diagram is shown in figure 1. for proper operation the device should be used within the recommended conditions. all voltages are absolute referenced to v ss . the v s offset is tested with all supplies biased at 15v differential (note 1). all input pin (v in ) and i trip are clamped with a 5.2v zener diode and pull-up resistor to v dd symbol definition min max units v b1,2,3 high side floating supply voltage v s +12 v s +20 v s1,2,3 high side floating supply offset voltage note 2 450 v dd low side and logic fixed supply voltage 12 20 v itrip t/i trip input voltage v ss v ss +5 v in logic input voltage lin, hin v ss v ss +5 v v v static electrical characteristics driver function v bias (v cc , v bs1,2,3 )=15v, unless otherwise specified. the v in and i in parameters are referenced to v ss and are appli- cable to all six channels. (note 1) absolute maximum ratings driver function absolute maximum ratings indicate substaines limits beyond which damage to the device may occur. all voltage param- eters are absolute voltages referenced to (note 1) v ss symbol definition min max units v s1,2,3 high side offset voltage -0.3 600 v v b1,2,3 high side floating supply voltage -0.3 20 v v dd low side and logic fixed supply voltage -0.3 20 v v in input voltage lin, hin, t/i trip -0.3 7 v t j juction temperature -40 150 c symbol definition min typ max units v in,th+ positive going input threshold 3.0 --- --- v v in,th- negative going input threshold --- --- 0.8 v i qbs quiescent v bs supply current --- 70 120 a i qcc quiscent v cc supply current --- 1.6 2.3 ma i lk offset supply leakage current --- --- 50 a i in+ input bias current (out=lo) --- 100 220 a i in+ input bias current (out=hi) --- 200 300 a v(i trip )i trip threshold voltage (out=hi or out=lo) 3.85 4.3 4.75 v 11.4 --- v v v 10.9 0.2 10.4 --- v ccuv+ v bsuv+ v ccuv- v bsuv- v cc and v bs supply undervoltage negative going threshold v ccuvh v bsuvh v cc and v bs supply undervoltage i lockout hysteresis 10.6 11.1 11.6 v cc and v bs supply undervoltage positive going threshold
irams10up60 apbf www.irf.com 5 note 3: the maximum recommended sense voltage at the t/i trip terminal under normal operating conditions is 3.3v. thermistor built-in irams10up60a pbf internal ntc - thermistor characteristics note 1: for more details, see ir21365 data sheet note 2: logic operational for v s from v - -5v to v - +600v. logic stata held for v s from v - -5v to v - -v bs . (please refer to dt97-3 for more details) symbol definition min typ max units t on input to output propagation turn-on delay time (see fig.11) - 470 - ns t off input to output propagation turn-off delay time (see fig. 11) - 615 - ns d t dead time - 300 - ns i/t trip t/i trip to six switch to turn-off propagation delay (see fig. 2) - 750 - ns t fcltrl post i trip to six switch to turn-off clear time (see fig. 2) - 9 - ms typ units conditions r 25 resistance 100 +/- 5% k ? t c = 25c r 125 resistance 2.522 + 17.3 % /- 14.9% k ? t c = 125c b b-constant (25-50c) 4250 +/- 3% k r 2 = r 1 e [b(1/t2 - 1/t1)] -40 / 125 c 1mw/ct c = 25c parameter temperature range typ. dissipation constant ir21365 12k ntc v cc (22) t/i trip (21) v ss (23) 4.3k dynamic electrical characteristics v dd =v bs =v bias =15v, i o =1a, v d =9v, pwm in =2khz, v in_on =v in _ th+ , v in_off =v in_th- t a =25c, unless otherwise specified
irams10up60a pbf 6 www.irf.com figure1. input/output timing diagram note 4: the shaded area indicates that both high-side and low-side switches are off and therefore the half- bridge output voltage would be determined by the direction of current flow in the load. ho1,2,3 lo1,2,3 itrip u,v,w lin1,2,3 hin1,2,3 ho lo u,v,w ic driver v + hin1,2,3 lin1,2,3 (15,16,17) (18,19,20) (8,5,2) itrip u,v,w 001vbus 0100 011x 1xxx hin1,2,3 lin1,2,3
irams10up60 apbf www.irf.com 7 note 5: the shaded area indicates that both high-side and low-side switches are off and therefore the half- bridge output voltage would be determined by the direction of current flow in the load. figure 2. t/i trip timing waveform t/itrip lin1,2,3 hin1,2,3 t fltclr 50% 50% u,v,w
irams10up60a pbf 8 www.irf.com module pin-out description pin name description 1 vb3 high side floating supply voltage 3 2 w,vs3 output 3 - high side floating supply offset voltage 3nanone 4 vb2 high side floating supply voltage 2 5 v,vs2 output 2 - high side floating supply offset voltage 6nanone 7 vb1 high side floating supply voltage 1 8 u,vs1 output 1 - high side floating supply offset voltage 9nanone 10 v+ positive bus input voltage 11 na none 12 le1 low side emitter connection - phase 1 13 le2 low side emitter connection - phase 2 14 le3 low side emitter connection - phase 3 15 hin1 logic input high side gate driver - phase 1 16 hin2 logic input high side gate driver - phase 2 17 hin3 logic input high side gate driver - phase 3 18 lin1 logic input low side gate driver - phase 1 19 lin2 logic input low side gate driver - phase 2 20 lin3 logic input low side gate driver - phase 3 21 t/itrip temperature monitor and shut-down pin 22 vcc +15v main supply 23 vss negative main supply
irams10up60 apbf www.irf.com 9 typical application connection irams10up60a pbf v dd (15 v) t/i trip v ss 3.3 v ntc 12k 5k 1m controller 3-ph ac motor l in w h in w l in u l in v lew h in u h in v leu lev v+ vsu v b u vsv v b v vsw v b w driver ic dc bus capacitors phase leg current sense temp sense boot-strap capacitors o/c sense (active low) 10m 6.8k 10.2k u v w current sensing can use a single sense resistor or phase leg sensing as shown 0.1 m 1. electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and emi problems. additional high frequency ceramic capacitor mounted close to the module pins will further improve perfor- mance. 2. in order to provide good decoupling between v cc -gnd and v b -v ss terminals, the capacitors shown connected be- tween these terminals should be located very close to the module pins. additional high frequency capacitors, typically 0.1 f, are strongly recommended. 3. value of the boot-strap capacitors depends upon the switching frequency. their selection should be made based on ir design tip dn 98-2a, application note an-1044 or figure 9. 4. low inductance shunt resistors shuld be used for phase leg current sensing. similarly, the length of the traces be- tween pins 12, 13 and 14 to the corrisponding shunt resistors should be kept as small as possible. 5. over-current sense signal can be obtained from external hardware detecting excessive instantaneous current in in- verter.
irams10up60a pbf 10 www.irf.com figure 3. maximum sinusoidal phase current as function of switching frequency v bus =400v, t j =150c, modulation depth=0.8, pf=0.6 figure 4. maximum sinusoidal phase current as function of modulation frequency v bus =400v, t j =150c, t c =100c, modulation depth=0.8, pf=0.6 0 1 2 3 4 5 6 7 8 9 10 02468101214161820 pwm switching frequency (khz) maximum rms output current/phase (a) . tc=100c tc=110c tc=120c 0 1 2 3 4 5 6 7 110100 motor current modulation frequency (hz) maximum rms phase current (a) . 12 khz 16 khz 20 khz switching frequency:
irams10up60 apbf www.irf.com 11 figure 5. igbt turn-on. typical turn-on waveform @t j =125c, v bus =400v figure 6. igbt turn-off. typical turn-off waveform @t j =125c, v bus =400v -1 0 1 2 3 4 5 6 7 8 9 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 time ( s) current (a) -50 0 50 100 150 200 250 300 350 400 450 voltage (v) current volta g e -1 0 1 2 3 4 5 6 7 8 9 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 time ( s) current (a) -50 0 50 100 150 200 250 300 350 400 450 voltage (v) current volta g e
irams10up60a pbf 12 www.irf.com figure 7. variation of thermistor resistance with temperature figure 8. variation of temperature sense voltage with thermistor tempera- ture using external bias resistance of 4.3k ?, v cc =15v 1 10 100 1000 0 20 40 60 80 100 120 140 temperature (c) thermistor resistance (k _ ? ) minimum nominal maximum 0 1 2 3 4 0 20 40 60 80 100 120 140 th e r mis t o r te mp e r a t u r e (c ) v sense (v) . maximum nominal minimum
irams10up60 apbf www.irf.com 13 figure 10. recommended minimum bootstrap capacitor value vs switching frequency figure 9. estimated maximum igbt junction temperature with thermistor temperature 2.2 4.7 15 0 2.5 5 7.5 10 12.5 15 17.5 20 0 1.5 3 4.5 6 7.5 9 10.51213.51516.51819.5 switching frequency (khz) capacitance ( f) 6.8 3.3 5101520 60 80 100 120 140 160 180 80 90 100 110 120 130 140 150 thermistor temperature (c) igbt junction temperature (c) .
irams10up60a pbf 14 www.irf.com figure 11. switching parameter definitions figure 11a. input to output propaga- tion turn-on delay time figure 11b. input to output propagation turn-off delay timet figure 11c. diode reverse recovery v ce i f h in /l in t rr i rr v ce i c h in /l in t on t r 50% h in /l in 90% i c 10% i c 50% h in /l in v ce i c h in /l in t off t f 90% i c 10% i c 10% v ce
irams10up60 apbf www.irf.com 15 figure ct1. switching loss circuit figure ct2. s.c.soa circuit ho lo u,v,w ic driver vbus lin1,2,3 5v hin1,2,3 in io pwm=4 s ho lo u,v,w ic driver vbus lin1,2,3 hin1,2,3 in 10k 1k 5vzd v cc i o figure ct3. r.b.soa circuit in io ho lo u,v,w ic driver vbus lin1,2,3 hin1,2,3 in 10k 1k 5vzd v cc i o v p =peak voltage on the igbt die v p =peak voltage on the igbt die
irams10up60a pbf 16 www.irf.com standard pin leadforming option notes: dimensions in mm 1 - marking for pin 1 identification 2- product part number 3- lot and date code marking package outline 027-e2d24 note 1 note 2 note 3 for mounting instruction see an-1049
irams10up60 apbf www.irf.com 17 package outline pin leadforming option -2 notes: dimensions in mm 1 - marking for pin 1 identification 2- product part number 3- lot and date code marking 027-e2d24 note 1 note 2 note 3 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information rev g, 10/07 data and specifications are subject to change without notice

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